研究領(lǐng)域
◆ 量子材料表面生長機理與物性研究
◆ 新能源材料的計算設(shè)計
◆ 非平衡條件下物相選擇機理研究
學(xué)習(xí)經(jīng)歷
◆Ph.D. Physics, Fudan University, 2006
◆M.Sc. Physics, Xiangtan University, 2002
◆B.A. Physics, Xiangtan University, 1999
工作經(jīng)歷
◆Sep. 2019 - Present Associate Professor, Department of Physics, Southern University of Science and Technology
◆Feb. 2013 - Sep. 2019 Assistant Professor, Department of Physics, Southern University of Science and Technology
◆Aug. 2008 - Apr. 2012 Postdoc Research Associate, Ames Laboratory
◆Aug. 2006 - Aug. 2008 Joint Postdoc Research Associate, Georgia Institute of Technology & Ames Laboratory,
◆Dec. 2004 - Aug. 2006 Visiting Scholar, Harvard University and Oak Ridge National Laboratory
代表文章
◆Li Huang, C.Z. Wang, M.Z. Li, K.M. Ho, Coverage Dependent Collective Diffusion of Dense Pb Wetting Layer on Si(111)",Phys. Rev. Lett. 108, (2012).
◆Li Huang, X.W. Fang, C.Z. Wang, M.J. Kramer, Z.J. Ding, K.M. Ho, Medium-range icosahedral order in quasicrystal-formingZr2Pd binary metallic glass," Appl. Phys. Lett. 98, (2011).
◆Li Huang, C.Z. Wang, K.M. Ho, Structure and dynamics of liquid Ni36 Zr64 by ab initio molecular dynamics," Phys. Rev. B 83, 184103 (2011).
◆Li Huang, C.Z. Wang, S.G. Hao, M.J. Kramer and K.M. Ho, Short- and Medium-Range Order in Amorphous Zr2Ni Metallic Alloy," Phys. Rev. B 81, 094118 (2010).
◆Li Huang, C.Z. Wang, S.G. Hao, M.J. Kramer and K.M. Ho, Atomic Size and Chemical Effects on the Local Order of Zr2M (M=Co, Ni, Cu, and Ag) Binary Liquids," Phys. Rev. B 81, 014108
◆Li Huang, N. Lu, J.A. Yan, M.Y. Chou, C.Z. Wang, and K.M. Ho, Size- and Strain-dependent Electronic Structures inH-passivated Si [112] Nanowires," Journal of Physical Chemistry C 112, 15680 (2008).
◆Li Huang, X. G. Gong, E. Gergert E, F. Forster, A. Bendounan, F. Reinert, and Zhenyu Zhang, Evolution of a Symmetry Gap and Synergetic Quantum Well States in Ultrathin Ag Films on Au (111) substrates," Europhysics Letters 78, 57003 (2007).
◆Li Huang, Feng Liu, G.H. Lu, and X. G. Gong, First-principles study of adsorption and diffusion on Ge/Si(001)-(2x8) and Ge/Si(105)-(1x2) surfaces," Surf. Sci. 601, 3067 (2007).
◆Li Huang, Feng Liu, G.H. Lu, and X. G. Gong, Surface Mobility Difference between Si and Ge and its Effect on Growth of SiGeAlloy Films and Islands," Phys. Rev. Lett. 96, 16103 (2006).
◆Li Huang, Feng Liu and X. G. Gong, Strain Effect on Adatom Binding and Diffusion in Homo-and Hetero-epitaxies of Si and Ge on (001) Surfaces," Phys. Rev. B 70, 155320 (2004).
